MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices

Journal of Crystal Growth

Volumn 81, Issue 1-4, 1987, Pages 349-358

  Hiyamizu, S ^a   Fujii, T ^a   Muto, S ^a   Inata, T ^a   Nakata, Y ^a   Sugiyama, Y ^a   Sasa, S ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

HIGH-SPEED DEVICES; MBE GROWTH; MULTILAYER HETEROSTRUCTURES; PULSED MOLECULAR BEAM; RESONANT TUNNELING BARRIER;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0022667438     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(87)90416-7     Document Type: Article

References (52)

1. Proc. 7th Intern. Symp. on GaAs and Related Compounds
2. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
3. Proc. 12th Intern. Symp. on GaAs and Related Compounds
4. MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
5. Composition Control of AlxGa1-xAs and New Type of Superlattice by Pulsed Molecular Beam
6. 0.52As
7. Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0=
8. InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
9. Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells
10. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
11. A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
12. A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
13. Room Temperature Observation of Differential Negative Resistance in an AlAs/GaAs/AlAs Resonant Tunneling Diode
14. Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier Widths
15. Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE