A new minority carrier lifetime model for heavily doped GaAs and InGaAsP to obtain analytical solutions

Solid State Electronics

Volumn 30, Issue 7, 1987, Pages 773-774

  Selvakumar, C R ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS - MATHEMATICAL MODELS;

CONTINUITY EQUATION; LIFETIME MODEL; MINORITY CARRIER;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0023383077     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90119-5     Document Type: Article

References (13)

1. Photoluminescence technique for the determination of minority-carrier diffusion length in GaAs grown by molecular beam epitaxy
2. Concentration-dependent absorption and spontaneous emission of heavily doped GaAs