Is Npn or Pnp the better choice for millimetre-wave AlGaAs/GaAs heterojunction bipolar transistors?

Solid State Electronics

Volumn 33, Issue 9, 1990, Pages 1209-1210

  Gao, Guang Bo ^c   Roulston, David J ^a   Morkoc, Hadis ^b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS; NPN JUNCTIONS; PNP JUNCTIONS;

TRANSISTORS, BIPOLAR;

EID: 0025482269     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(90)90101-J     Document Type: Article

References (13)

1. Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed
2. Semiconducting and other major properties of gallium arsenide
3. Monte Carlo investigation of transient hole transport in GaAs