The carrier mobilities in Ga0.47In0.53as grown by organo-mettalic CVD and liquid-phase epitaxy

Journal of Crystal Growth

Volumn 54, Issue 1, 1981, Pages 127-131

  Pearsall, T P ^a   Hirtz, J P ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345585350     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(81)90258-X     Document Type: Article

References (16)

1. Ga<inf>0.47</inf>In<inf>0.53</inf>As: A ternary semiconductor for photodetector applications
2. Proc. 7th Intern. Symp. on GaAs and Related Compounds
3. Hall Mobility and Hall Factor of In0.53Ga0.47As
4. Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave Devices