Heterojunction bipolar transistor using pseudomorphic GaInAs for the base

Applied Physics Letters

Volumn 49, Issue 3, 1986, Pages 179-180

  Enquist, P M ^a   Ramberg, L R ^a   Najjar, F E ^a   Schaff, W J ^a   Eastman, L F ^a  

^a Department of Obstetrics Gynecology   (United States)

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EID: 0041976582     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.97217     Document Type: Article

References (3)