Carbon and indium codoping in GaAs for reliable AlGaAs/GaAs heterojunction bipolar transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 33, Issue 11, 1994, Pages 6129-6135

  Nittono, Takumi ^a   Watanabe, Noriyuki ^a   Ito, Hiroshi ^a   Sugahara, Hirohiko ^a   Nagata, Koichi ^a   Nakajima, Osaake ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CARBON; CARBON INORGANIC COMPOUNDS; CARBON TETRACHLORIDE; DOPING (ADDITIVES); HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH;

CARBON DOPING; COLLECTOR CURRENT DENSITY; INDIUM DOPING; LATTICE STRAIN; STRAINED LAYER MODEL;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0028546135     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (39)