Monte Carlo Analysis of Nonequilibrium Electron Transport in InAlGaAs/InGaAs HBT's

IEEE Transactions on Electron Devices

Volumn 40, Issue 11, 1993, Pages 1950-1956

  Nakajima, Hiroki ^a   Ishibashi, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; STATISTICAL METHODS;

HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM ALUMINUM GALLIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; NONEQUILIBRIUM ELECTRON TRANSPORT;

BIPOLAR TRANSISTORS;

EID: 0027694532     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.239733     Document Type: Article

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