Proposed two-level acceptor-donor (ad) center and the nature of switching traps in irradiated MOS structures

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2579-2586

  Pershenkov, V S ^a   Cherepko, S V ^a   Sogoyan, A V ^a   Belyakov, V V ^b   Ulimov, V N ^b   Abramov, V V ^b   Shalnov, A V ^b   Rusanovsky, V I ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b Specialized Electronic Systems   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CHARGE TRANSFER; ELECTRON ENERGY LEVELS; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

ACCEPTOR-DONOR CENTERS; ELECTRON CAPTURE; INTERFACE TRAPS; SWITCHING TRAPS;

MOS DEVICES;

EID: 0030364981     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556839     Document Type: Article

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