Mosfet and Mos Capacitor Responses to Ionizing Radiation

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1461-1466

  Benedetto, J M ^a   Boesch, H E ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS; SEMICONDUCTOR DEVICES, MOSFET - RADIATION EFFECTS;

INTERFACE STATES; SLOW STATES; THRESHOLD VOLTAGE SHIFT;

CAPACITORS;

EID: 0021602022     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333530     Document Type: Article

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