PHYSICAL MECHANISMS CONTRIBUTING TO DEVICE “REBOUND”

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1434-1438

  Schwank, J R ^a   WinoKur, P S ^a   McWhorter, P J ^a   Sexton, F W ^a   Dressendorfer, P V ^a   Turpin, D C ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT - ANNEALING; TRANSISTORS - RADIATION EFFECTS;

BIAS ANNEAL; DEVICE REBOUND; INTERFACE STATES; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES, MOS;

EID: 0021587257     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333525     Document Type: Article

References (12)

1. See for example, E. H. Nicollian and J. R. Brews, MOS Physics and Technology, (New York: John Wiley & Sons, 1982) pp 549–580.
2. D. J. DiMaria, Proc. of Intl. Conf. on Phys. of SiO and its Interfaces, (New York: Pergamon, 1978) p 160.
3. P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys., 10, 3495 (1984).
4. T. P. Ma, G. Scoggan, and R. L. Leone, Appl. Phys. Lett., 27, 61 (1975).
5. R. L. Pease, Final Report, Sandia National Labo-ratories, SLA-73-1122, December 1973.
6. P. V. Dressendorfer, J. M. Soden, J. J. Harring-ton, and T. V. Nordstrom, IEEE Trans. on Nucl. Sci., NS-28, 4281 (1981).
7. J. R. Schwank and W. R. Dawes, Jr., IEEE Trans. on Nucl. Sci., NS-30, 4100 (1983).
8. S. M. Sze, Physics of Semiconductor Devices, Second Edition (New York: John Wiley & Sons, 1981).
9. J. R. Brews, IEEE Trans. Electron Dev., ED-26, 1282 (1979).
10. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, “Corre-lating the Radiation Response of MOS Capacitors and Transistors,” this conference.
11. T. V. Nordstrom, F. W. Sexton, and R. W. Light, 5th IEEE Custom Integrated Circuits Conference, May 1983, Rochester, NY.
12. F. P. Heiman and G. Warfield, IEEE Trans. Electron Dev., ED-12, 167 (1965).