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Volumn 41, Issue 6, 1994, Pages 1828-1834

Evidence for Two Types of Radiation-Induced Trapped Positive Charge

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; GATES (TRANSISTOR); OXIDES; PARTICLE BEAM INJECTION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS;

EID: 0028721232     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340514     Document Type: Article
Times cited : (28)

References (18)
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    • Experimental Evidence of Two Species of Trapped Positive Charge
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    • Positive charge generation in metal-oxide-semiconductor capacitors
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  • 8
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    • Saks, N.S.1    Klein, R.B.2    Toon, S.3    Griscom, D.L.4
  • 11
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    • A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices
    • Adelphi, MD, October
    • F.B. McLean, “A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices,” HDL-TR-1765, 1765, Harry Diamond Laboratories, Adelphi, MD, October 1976.
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    • edited by C.R. Helms and B.E. Deal, Plenum Press
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.