-
1
-
-
0021587257
-
Physical Mechanisms Contributing to Device Rebound
-
J.R. Schwank, P.S. Winokur, P.J. McWhorter, F.W. Sexton, P.V. Dressendorfer, and D.C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci. NS31, 1434-1438 (1984).
-
(1984)
IEEE Trans. Nucl. Sci
, vol.NS31
, pp. 1434-1438
-
-
Schwank, J.R.1
Winokur, P.S.2
McWhorter, P.J.3
Sexton, F.W.4
Dressendorfer, P.V.5
Turpin, D.C.6
-
2
-
-
0024169251
-
Reversibility of Trapped Hole Annealing
-
A.J. Lelis, H.E. Boesch, Jr., T.R. Oldham, and F.B. McLean, “Reversibility of Trapped Hole Annealing,” IEEE Trans. Nucl. Sci. NS35, 1186-1187 (1988).
-
(1988)
IEEE Trans. Nucl. Sci
, vol.NS35
, pp. 1186-1187
-
-
Lelis, A.J.1
Boesch, H.E.2
Oldham, T.R.3
McLean, F.B.4
-
3
-
-
0024913722
-
The Nature of the Trapped Hole Annealing Process
-
A.J. Lelis, T.R. Oldham, H.E. Boesch, Jr., and F.B. McLean, “The Nature of the Trapped Hole Annealing Process,” IEEE Trans. Nucl. Sci. 36, 1808–1815 (1989).
-
(1989)
IEEE Trans. Nucl. Sci
, vol.36
, pp. 1808-1815
-
-
Lelis, A.J.1
Oldham, T.R.2
Boesch, H.E.3
McLean, F.B.4
-
4
-
-
0022247785
-
Defect Production in SiO2 by X-ray and Co-60 Radiations
-
C.M. Dozier, D.B. Brown, J.L. Throckmorton, and D.I. Ma, “Defect Production in Si O2 by X-ray and Co-60 Radiations,” IEEE Trans. Nucl. Sci. NS32, 4363–4369 (1985).
-
(1985)
IEEE Trans. Nucl. Sci
, vol.NS32
, pp. 4363-4369
-
-
Dozier, C.M.1
Brown, D.B.2
Throckmorton, J.L.3
Ma, D.I.4
-
5
-
-
0027797897
-
The Role of Border Traps in MOS High Temperature Postirradiation Annealing Response
-
D.M. Fleetwood, M.R. Shaneyfelt, L.C. Riewe, P.S. Winokur, and R.A. Reber, Jr., “The Role of Border Traps in MOS High Temperature Postirradiation Annealing Response,” IEEE Trans. Nucl. Sci. NS40, 1323–1334 (1993).
-
(1993)
IEEE Trans. Nucl. Sci
, vol.NS40
, pp. 1323-1334
-
-
Fleetwood, D.M.1
Shaneyfelt, M.R.2
Riewe, L.C.3
Winokur, P.S.4
Reber, R.A.5
-
6
-
-
0027809459
-
Experimental Evidence of Two Species of Trapped Positive Charge
-
R.K. Freitag, D.B. Brown, and C.M. Dozier, “Experimental Evidence of Two Species of Trapped Positive Charge,” IEEE Trans. Nucl. Sci. NS40, 1316–1322 (1993).
-
(1993)
IEEE Trans. Nucl. Sci
, vol.NS40
, pp. 1316-1322
-
-
Freitag, R.K.1
Brown, D.B.2
Dozier, C.M.3
-
7
-
-
36449004449
-
Positive charge generation in metal-oxide-semiconductor capacitors
-
L.P. Trombetta, F.J. Feigl, and R.J. Zeto, “Positive charge generation in metal-oxide-semiconductor capacitors,” J. Appl. Phys. 69, 2512–2521 (1991).
-
(1991)
J. Appl. Phys
, vol.69
, pp. 2512-2521
-
-
Trombetta, L.P.1
Feigl, F.J.2
Zeto, R.J.3
-
8
-
-
0019622395
-
Effects of avalanche injection of electrons into silicon dioxide generation of fast and slow interface states
-
S.K. Lai and D.R. Young, “Effects of avalanche injection of electrons into silicon dioxide generation of fast and slow interface states,” J. Appl. Phys. 52, 6231–6240 (1981)
-
(1981)
J. Appl. Phys
, vol.52
, pp. 6231-6240
-
-
Lai, S.K.1
Young, D.R.2
-
10
-
-
0001660156
-
Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K
-
N.S. Saks, R.B. Klein, S. Toon, and D.L. Griscom, “Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K,” J. Appl. Phys. 70, 7334–7340 (1991).
-
(1991)
J. Appl. Phys
, vol.70
, pp. 7334-7340
-
-
Saks, N.S.1
Klein, R.B.2
Toon, S.3
Griscom, D.L.4
-
11
-
-
0008560925
-
A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices
-
Adelphi, MD, October
-
F.B. McLean, “A Direct Tunneling Model of Charge Transfer at the Insulator-Semiconductor Interface in MIS Devices,” HDL-TR-1765, 1765, Harry Diamond Laboratories, Adelphi, MD, October 1976.
-
(1976)
HDL-TR-1765, 1765, Harry Diamond Laboratories
, vol.1765
-
-
McLean, F.B.1
-
12
-
-
21544480403
-
Effects of oxide traps, interface traps, and 'border traps' on metal-oxide-semiconductor semiconductor devices
-
D.M. Fleetwood, P.S. Winokur, R.A. Reber, Jr., T.L. Meisenheimer, J.R. Schwank, M.R. Shaneyfelt, and L.C. Riewe, “Effects of oxide traps, interface traps, and ‘border traps’ on metal-oxide-semiconductor semiconductor devices,” J. Appl. Phys. 73, 5058–5074 (1993).
-
(1993)
J. Appl. Phys
, vol.73
, pp. 5058-5074
-
-
Fleetwood, D.M.1
Winokur, P.S.2
Reber, R.A.3
Meisenheimer, T.L.4
Schwank, J.R.5
Shaneyfelt, M.R.6
Riewe, L.C.7
-
13
-
-
0008990822
-
Effects of Introducing H2 into Irradiated MOSFETS From Room Temperature to 250°C
-
edited by C.R. Helms and B.E. Deal, Plenum Press
-
R.E. Stahlbush and A.H. Edwards, “Effects of Introducing H 2 into Irradiated MOSFETS From Room Temperature to 250°C,” The Physics and Chemistry of SiO2, and Si/SiO2 Interface, edited by C.R. Helms and B.E. Deal, Plenum Press, 1993, pp.489-498.
-
(1993)
The Physics and Chemistry of SiO2, and Si/SiO2 Interface
, pp. 489-498
-
-
Stahlbush, R.E.1
Edwards, A.H.2
-
14
-
-
3643060633
-
A defect relaxation model for bias instabilities in metal-oxide-semiconductor capacitors
-
M.E. Zvanut, F.J. Feigl, and J.D. Zook, “A defect relaxation model for bias instabilities in metal-oxide-semiconductor capacitors,” J. Appl. Phys. 64, 2221–2223 (1988).
-
(1988)
J. Appl. Phys
, vol.64
, pp. 2221-2223
-
-
Zvanut, M.E.1
Feigl, F.J.2
Zook, J.D.3
-
15
-
-
0000147534
-
Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling
-
W.B. Fowler, J.K. Rudra, M.E. Zvanut, and F.J. Feigl, “Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling,” Phys. Rev. B41, 8313–8317 (1990).
-
(1990)
Phys. Rev
, vol.B41
, pp. 8313-8317
-
-
Fowler, W.B.1
Rudra, J.K.2
Zvanut, M.E.3
Feigl, F.J.4
-
16
-
-
0021427238
-
Hole traps and trivalent silicon centers in metal/oxide/silicon devices
-
P.M. Lenahan and P.V. Dressendorfer, “Hole traps and trivalent silicon centers in metal/oxide/silicon devices,” J. Appl. Phys. 55, 3495 (1984).
-
(1984)
J. Appl. Phys
, vol.55
, Issue.3495
-
-
Lenahan, P.M.1
Dressendorfer, P.V.2
-
17
-
-
84939696418
-
Microscopic nature of border traps in MOS devices
-
this issue.
-
W.L. Warren, M.R. Shaneyfelt, D.M. Fleetwood, J.R. Schwank, P.S. Winokur, and R.A.B. Devine, “Microscopic nature of border traps in MOS devices,” IEEE Trans. Nucl. Sci., this issue.
-
IEEE Trans. Nucl. Sci
-
-
Warren, W.L.1
Shaneyfelt, M.R.2
Fleetwood, D.M.3
Schwank, J.R.4
Winokur, P.S.5
Devine, R.A.B.6
-
18
-
-
36549098783
-
An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors
-
L.P. Trombetta, G.J. Gerardi, D. J. DiMaria, and E. Tierney, “An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors,” J. Appl. Phys. 64, 2434–2438 (1988).
-
(1988)
J. Appl. Phys
, vol.64
, pp. 2434-2438
-
-
Trombetta, L.P.1
Gerardi, G.J.2
DiMaria, D.J.3
Tierney, E.4
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