Effect of Electron Traps on Reversibility of Annealing

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1750-1757

  Pershenkov, V S ^a   Belyakov, V V ^b   Cherepko, S V ^b   Nikiforov, A Y ^c   Sogoyan, A V ^b   Ulimov, V N ^d   Emelianov, V V ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b Specialized Electronic Systems ^*

^c Research Institute of Scientific Instruments ^*  (United States)

^d RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; ELECTRONS; GATES (TRANSISTOR); RADIATION EFFECTS; SILICA;

ALTERED POLARITY GATE BIAS; ELECTRON TRAPS; RECHARGEABLE RADIATION; REVERSE ANNEALING; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029491544     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488775     Document Type: Article

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