Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 805-809

  Emelianov, V V ^a   Zebrev, G I ^a   Ulimov, V N ^a   Useinov, R G ^a   Belyakov, V V ^a   Pershenkov, V S ^a  

^a RESEARCH INSTITUTE OF SCIENTIFIC INSTRUMENTS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CHARGE; SEMICONDUCTOR DEVICE MODELS; STRESS RELAXATION; THERMAL EFFECTS; THERMAL STRESS; TRANSISTORS;

POSTIRRADIATION RESPONSE; REVERSIBLE CHARGE RELAXATION; REVERSIBLE POSITIVE CHARGE ANNEALING;

MOS DEVICES;

EID: 0030165669     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510716     Document Type: Article

References (10)

1. J. R. Schwank, P. S. Winokur, P. J. Mcwhorter, P. V. Dressendorfer, F. W. Sexton, and D. C. Turpin, "Physical Mechanisms Contributing to Device Rebound,", IEEE Trans. Nucl. Sci. , NS-31, No. 6, 1984, pp. 1434-1438.
2. A. J. Lelis, H. E. Boesch Jr. , T. R. Oldham, F. B. McLean, "The Nature of the Trapped Hole Annealing Process", IEEE Trans. Nucl. Sci. , NS-36, No. 6, 1989, pp. 1808-1815.
3. A. J. Lelis, T. R. Oldham, "Time Dependence of Switching Oxide Traps", IEEE Trans. Nucl. Sci. , NS-41, No. 6, 1994, pp. 1835-1843.
4. R. K. Freitag, D. B. Brown, C. M. Dozier, "Experimental Evidence of Two Species of Radiation Induced Trapped Positive Charge", IEEE Trans. Nucl. Sci. , NS-40, No. 6, 1993, pp. 1316-1322.
5. D. M. Fleetwood, P. S. Winokur, R. A. Reber, M. R. Shaneyfelt, L. C. Riewe, "The Role of Border Traps in MOS High-Temperature Postirradiation Annealing Response", IEEE Trans. Nucl. Sci. , NS-40, No. 6, 1993, p. p. 1323-1334.
6. J. M. Benedetto and H. E. Boesch Jr. , "MOSFET and MOS Capacitor Separating Interface and Oxide Charge Effects in MOS Device Characteristics", IEEE Trans. Nucl. Sci. , NS-31, No. 6, 1984, pp. 1461-1466.
7. B. K. Ridley, Quantum processes in semiconductors, Clarendon Press Oxford, 1982.
8. M. Lannoo, J. Bourgoin, "Point Defects in Semiconductors", vol. 2 , Springer-Verlag, 1981 and references therein.
9. M.J. Kirton and M. J. Uren, "Noise in Solid State Microstructures: A New Perspective on Individual Defects, Interface States and Low-Frequency (1/f) Noise", Adv. in Phys. 38, 1989, p. 367.
10. D.M. Fleetwood, S. L. Miller, R. A. Reber Jr. , P. J. McWhorter, P. S. Winokur, M. R. Shaneyfelt and J. R. Schwank, "New Insights into Radiation-Induced Oxide-Trap Charge through TSC Measurement and Analysis", IEEE Trans. Nucl. Sci. , NS-39, No. 6, 1992, pp. 2192-2203.