Electron Spin Resonance Evidence that E'γ Centers Can Behave as Switching Oxide Traps

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1744-1749

  Conley, John F ^a   Lenahan, Patrick M ^b   Lelis, Aivars J ^c   Oldham, Timothy R ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b US Army Research Laboratory ^*

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MAGNETIC RESONANCE MEASUREMENT; OXIDES; PARAMAGNETIC RESONANCE; SEMICONDUCTOR GROWTH; SILICA;

SWITCHING OXIDE TRAPS; THERMALLY GROWN OXIDES;

MOSFET DEVICES;

EID: 0029518434     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.488774     Document Type: Article

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