Characterization of annealing of co60 gamma-ray damage at the si/sio2 interface

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4094-4099

  Sabnis, Anant G ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; HEAT TREATMENT - ANNEALING; RADIATION DAMAGE;

SEMICONDUCTOR DEVICES;

EID: 0020915901     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333088     Document Type: Article

References (7)

1. A. G. Sabnis, J. T. Nelson, and J. N. Billig, “Influence of Encapsulation Films on the Properties of Si/SiO2 Interface of MOS Structures When Exposed to Radiation”, IEEE IEDM Tech. Digest, pp. 244–247, Washington, D.C., 7–9 December 1981.
2. P. S. Winokur and H. E. Boesch, Jr., “Interface-State Generation in Radiation Hard Oxides”, IEEE Trans. on Nucl. Sci., Vol. NS-27, No. 6, pp. 1647–1650, December 1980.
3. J. T. Clemens, R. H. Doklan, J. J. Nolen, “An N-Channel Si-Gate Integrated Circuit Technology”, IEEE IEDM Technical Digest, pp. 299–302, Washington, D.C., December 1975.
4. S. K. Lai, “Two Carrier Nature of Interface State Generation in Hole Trapping and Radiation Damage”, Appl. Phys. Lett., Vol. 39, No. 1, pp. 58–61, 1 July 1981.
5. A. G. Sabnis and J. T. Nelson, “A Physical Model for Degradation of DRAMS During Accelerated Stress Aging”, 21st Annual Proc. of 1983 International Reliability Physics Symposium, Phoenix, Az., pp. 90–95, April 5–7, 1983
6. J. L. Boyle, R. C. McIntyre, R. E. Youtz, and J. T. Nelson, “Latent d-Radiation Damage in Hermetically Sealed NMOS Devices”, 19th Annual Proceedings of the International Reliability Physics Symposium, Orlando, Florida, pp. 34–37, April 7–9, 1981.
7. A. S. Grove and E. H. Snow, “A Model for Radiation Damage in Metal-Oxide-Semiconductor Structures”, Proc. IEEE, Vol. 54, pp. 894–895, June 1966.