Evidence of negative charge trapping in high temperature annealed thermal oxide

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 473-478

  Paillet, P ^a   Herve, D ^a   Leray, J L ^a   Devine, R A B ^a  

^a DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); ION IMPLANTATION; MOS DEVICES; QUANTUM THEORY; RADIATION DAMAGE; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON SPIN RESONANCE; HIGH TEMPERATURE ANNEALED THERMAL OXIDE; NEGATIVE CHARGE TRAPPING; SEPARATION BY IMPLANTATION OF OXYGEN; THERMAL OXIDE; X RAY IRRADIATION;

OXIDES;

EID: 0028445490     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299787     Document Type: Article

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