A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1497-1501

  Galloway, K F ^a,b   Gaitan, M ^a   Russell, T J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; RADIATION EFFECTS - MATHEMATICAL MODELS;

CURRENT-VOLTAGE CURVES; INTERFACE TRAPS; MOBILITY DEGRADATION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021609193     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333537     Document Type: Article

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