Ac-bias annealing effects on radiation-induced interface traps

IEEE Transactions on Nuclear Science

Volumn 38, Issue 6, 1991, Pages 1094-1100

  Okabe, Takeaki ^a   Watanabe, Kikuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT--ANNEALING; TRANSISTORS;

GATE ELECTRODE MATERIALS; INTERFACE TRAPS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026371166     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.124080     Document Type: Article

References (16)

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