Coulomb charging effect in self-assembled Ge quantum dots studied by admittance spectroscopy

Physical Review Letters

Volumn 80, Issue 15, 1998, Pages 3340-3343

  Zhang, S K ^a   Lu, F ^a   Jiang, Z M ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; FERMI LEVEL; SCHOTTKY BARRIER DIODES; SPECTROSCOPY; TEMPERATURE;

ADMITTANCE SPECTROSCOPY; COULOMB CHARGING EFFECT; QUANTUM LEVELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032047520     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.80.3340     Document Type: Article

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