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Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 172-180

Silicon germanium heterostructures in electronics: The present and the future

(1) Paul, D J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

CMOS; Heterojunction bipolar transistor; MODFET; MOSFET; Quantum effect device; Si sige heterostructures

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); QUANTUM EFFECT DEVICES; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032068322 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00469-6 Document Type: Article

Times cited : (77)

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