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Volumn 321, Issue 1-2, 1998, Pages 60-64

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

(10) Jiang, Zui Min a Zhu, Hai Jun a Lu, Fang a,b Qin, Jie a Huang, Daming a Wang, Xun a Hu, Chang Wu b Chen, Yifan b Zhu, Ziqiang b Yao, Takafumi b

a FUDAN UNIVERSITY (China)

b TOHOKU UNIVERSITY (Japan)

Author keywords

Molecular beam epitaxy; Quantum dots; Three dimensional islanding growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; EXCITONS; LUMINESCENCE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

THREE DIMENSIONAL ISLANDING GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032066520 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00444-1 Document Type: Article

Times cited : (22)

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