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Volumn 74, Issue 2, 1999, Pages 185-187

Intersubband absorption in boron-doped multiple Ge quantum dots

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[No Author keywords available]

Indexed keywords


EID: 0000170143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123287     Document Type: Article
Times cited : (100)

References (18)
  • 16
    • 85034544703 scopus 로고    scopus 로고
    • The number was estimated based on unstrained Ge dots and underlying Si. The presence of strain as evidenced in, for example, Ref. 13, changes the bandgaps of Si and Ge, and thus the band offset
    • The number was estimated based on unstrained Ge dots and underlying Si. The presence of strain as evidenced in, for example, Ref. 13, changes the bandgaps of Si and Ge, and thus the band offset.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.