Formation of zero-dimensional hole states during molecular-beam epitaxy of Ge on Si (100)

JETP Letters

Volumn 68, Issue 2, 1998, Pages 135-141

  Yakimov, A I ^a   Dvurechenskii A V ^a   Nikiforov, A I ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001086199     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.567835     Document Type: Article

References (17)

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