Formation of zero-dimensional hole states in Ge/Si heterostructures probed with capacitance spectroscopy

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 332-335

  Yakimov, A I ^a   Dvurechenskii, A V ^a   Nikiforov, A I ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Capacitance spectroscopy; Germanium; Quantum dots; Silicon

Indexed keywords

CAPACITANCE; FILM GROWTH; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM DOTS;

CAPACITANCE SPECTROSCOPY; CAPACITANCE-VOLTAGE CHARACTERISTICS; ZERO-DIMENSIONAL HOLE STATE;

HETEROJUNCTIONS;

EID: 0032313250     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01250-4     Document Type: Article

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