Growth and characterization of self-assembled Ge-rich islands on Si

Semiconductor Science and Technology

Volumn 11, Issue 11 SUPPL. S, 1996, Pages 1521-1528

  Abstreiter, G ^a   Schittenhelm, P ^a   Engel, C ^a   Silveira, E ^a   Zrenner, A ^a   Meertens, D ^b   Jager W ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; EXPERIMENTS; GERMANIUM; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; SILICON;

GERMANIUM RICH ISLANDS; SEMICONDUCTOR ISLANDS;

SEMICONDUCTOR MATERIALS;

EID: 0030288275     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/11S/012     Document Type: Article

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