A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC's

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 545-550

  Tashiro, Tsutomu ^a   Tatsumi, Toru ^a   Sugiyama, Mitsuhiro ^a   Hashimoto, Toshiki ^a   Morikawa, Takenori ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INTEGRATED OPTOELECTRONICS; OPTICAL FIBERS; OPTICAL INTERCONNECTS; OPTICAL WAVEGUIDES; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES; SILICON ON INSULATOR TECHNOLOGY;

SELECTIVE EPITAXIAL GROWTH TECHNOLOGY; SEMICONDUCTOR PHOTODETECTOR; WET ETCHING PROCESS;

PHOTODETECTORS;

EID: 0031121237     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563356     Document Type: Article

References (19)

1. M. Yamamoto, M. Kubo, and K. Nakao, "Si-OEIC with a built-in pin-photodiode," IEEE Trans. Electron Devices, vol. 42, p. 58, 1995.
2. P. J.-W. Lim, A. Y. C. Tzeng, H. L. Chuang, and S. A. S. Onge, "A 3.3-V monolithic photodetector/CMOS preamplifier for 531 Mb/s optical data link applications," in ISSCC Tech. Dig., 1993, p. 96.
3. 1-x strained-layer superlattice waveguide photodetectors operating near 1.3 μm," Appl. Phys. Lett., vol. 48, no. 15, p. 963, Apr. 1986.
4. 1-x strained-layer superlattice detectors operating at λ = 1.3 μm," Appl. Phys. Lett., vol. 49, no. 3, p. 155, July 1986.
5. 1-x/Si infrared waveguide detectors," IEEE Trans. Electron Device Lett., vol. EDL-7, p. 330, 1986.
6. V. P. Kesan, P. G. May, E. Bassous, and S. S. Iyer, "Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications," in IEDM Tech. Dig., 1990, p. 637.
7. A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H.-J. Herzog, and H. Presting, "Integration of waveguides and photodetectors in SiGe for 1.3-μm Operation," IEEE Photon. Technol. Lett., vol. 6, p. 59, 1994.
8. B. Jalali, A. F. Levi, F. Ross, and E. A. Fitzgerald, "SiGe waveguide photodetectors grown by rapid thermal chemical vapor deposition," Electron. Lett., vol. 28, p. 269, 1992.
9. B. Jalali, L. Naval, and A. F. J. Levi, "Si-based receivers for optical data links," J. Lightwave Technol., vol. 12, p. 930, 1994.
10. M. Soda, H. Tezuka, F. Sato, T. Morikawa, T. Hashimoto, T. Tatsumi, T. Suzaki, and T. Tashiro, "One-chip receiver IC for 2.4-Gb/s optical communication systems," in CICC Tech. Dig., 1995, p. 99.
11. 1-x/Si strained-layer hetero structures," IEEE J. Quantum Electron., vol. QE-22, p. 1696, 1986.
12. M. Sugiyama, T. Shimizu, H. Takemura, A. Yoshino, N. Oda, T. Tashiro, Y. Minato, Y. Takahashi, and M. Nakamae, "Bipolar VLSI memory cell technology utilizing BPSG-filled trench isolation," in Symp. VLSI Tech. Dig., 1989, p. 59.
13. 4," in Proc. Solid State Devices and Materials, 1991, p. 719.
14. H. Hirayama, T. Tatsumi, and N. Aizaki, "Gas source silicon molecular beam epitaxy using disilane," Appl. Phys. Lett., vol. 52, p. 1484, 1988.
15. 6," J. Cryst. Growth, vol. 111, p. 860, 1991.
16. 4," J. Cryst. Growth, vol. 120, p. 279, 1992.
17. A. Sakai and T. Tatsumi, "Ge growth on Si using atomic hydrogen as a surface," Appl. Phys. Lett., vol. 64, p. 52, 1994.
18. T. Aoyama, T. Igarashi, and T. Tatsumi, "Facet formation mehcanism of silicon selective epitaxial layer by Si UHV-CVD," J. Cryst. Growth, vol. 136, p. 349, 1994.
19. 2," J. Cryst. Growth, vol. 120, p. 275, 1992.