In situ RHEED control of direct MBE growth of Ge quantum dots on Si (001)

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 736-740

  Markov, V A ^a   Nikiforov, A I ^a   Pchelyakov, O P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Germanium; MBE; Quantum dots; RHEED; Silicon

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

COULOMB BLOCKADE; RESONANCE HOLE TUNNELING; ZERO STREAK PROFILE ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031141843     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01180-3     Document Type: Article

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