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Volumn 72, Issue 2, 1998, Pages 179-181

Strain-induced island scaling during Si1-xGex heteroepitaxy

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EID: 0000332808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120622     Document Type: Article
Times cited : (82)

References (17)
  • 4
    • 0029343185 scopus 로고
    • W. Dorsch, S. Christiansen, M. Albrecht, P. O. Hansson, E. Bauser, and H. P. Strunk, Surf. Sci. 331-333, 896 (1994). The Ge contents of the layers considered in this article have been redetermined by Raman Spectroscopy to be about 27%. The argumentation of this article however is not affected.
    • (1994) Surf. Sci. , vol.331-333 , pp. 896
    • Dorsch, W.1    Christiansen, S.2    Albrecht, M.3    Hansson, P.O.4    Bauser, E.5    Strunk, H.P.6
  • 11
    • 21544451075 scopus 로고    scopus 로고
    • The deposited volume of layer material decreases with increasing x for comparable facetted island shapes, and the change in interfacial energy acts as additional driving force
    • The deposited volume of layer material decreases with increasing x for comparable facetted island shapes, and the change in interfacial energy acts as additional driving force.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.