Hopping conduction and field effect in si modulation-doped structures with embedded ge quantum dots

Physical Review B - Condensed Matter and Materials Physics

Volumn 59, Issue 19, 1999, Pages 12598-12603

  Biskupski, G ^c   Nikiforov, A I ^b   Pchelyakov, O P ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000096703     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.59.12598     Document Type: Article

References (23)

1. G. Medeiros-Ribeiro, D. Leonard, and P M. Petroff, Appl. Phys. Lett.66, 1767 (1995).
2. H. Sakaki, G. Yusa, T. Someya, Y. Ohno, T. Noda, H. Akiyama, Y. Kadoya, and H. Noge, Appl. Phys. Lett.67, 3444 (1995).
3. M. Grundmann, N N. Ledentsov, O. Stier, and D. Bimberg, Appl. Phys. Lett.68, 979 (1996).
4. M. Fricke, A. Lorke, J P. Kotthaus, G. Medeiros-Ribeiro, and P M. Petroff, Europhys. Lett.36, 197 (1996).
5. G. Yusa and H. Sakaki, Appl. Phys. Lett.70, 345 (1997).
6. N. Horiguchi, T. Futatsugi, Y. Nakata, and N. Yokoyama, Appl. Phys. Lett.70, 2294 (1997).
7. P. M. Petroff, K H. Schmidt, G. Medeiros-Ribeiro, A. Lorke, and J. Kotthaus, Jpn. J. Appl. Phys.36, 4068 (1997).
8. B. T. Miller, W. Hansen, S. Manus, R J. Luyken, A. Lorke, J P. Kotthaus, S. Huart, G. Medeiros-Ribeiro, and P M. Petroff, Phys. Rev. B56, 6764 (1997).
9. G. Medeiros-Ribeiro, F G. Pikus, P M. Petroff, and A L. Efros, Phys. Rev. B55, 1568 (1997).
10. E. Ribeiro, E. Muller, T. Heinzel, H. Auderset, K. Ensslin, G. Medeiros-Ribeiro, and P M. Petroff, Phys. Rev. B58, 1506 (1998).
11. C. S. Peng, Q. Huang, W Q. Cheng, J M. Zhou, Y H. Zhang, T T. Sheng, and C H. Tung, Phys. Rev. B57, 8805 (1998).
12. A. I. Yakimov, V A. Markov, A V. Dvurechenskii, and O P. Pchelyakov, J. Phys.: Condens. Matter6, 2573 (1994).
13. A. B. Talochkin, V A. Markov, S P. Suprun, and A I. Nikiforov, Zh. Éksp. Teor. Fiz. Pis’ma Red. 64, 224 (1996) [JETP Lett.64, 219 (1996)].
14. V. Ya. Aleshkin, N A. Bekin, N G. Kalugin, Z F. Krasil’nik, A V. Novikov, and V V. Postnikov, Zh. Éksp. Teor. Fiz. Pis’ma Red. 67, 46 (1998) [JETP Lett.67, 48 (1998)].
15. Feing Liu and M G. Lagally, Surf. Sci.386, 169 (1997).
16. S. K. Zhang, H J. Zhu, F. Lu, Z M. Jiang, and Xun Wang, Phys. Rev. Lett.80, 3340 (1998).
17. A. I. Yakimov, A V. Dvurechenskii, A I. Nikiforov, and O P. Pchelyakov, Zh. Éksp. Teor. Fiz. Pis’ma Red. 68, 125 (1998) [JETP Lett.68, 135 (1998)].
18. A. I. Yakimov, A V. Dvurechenskii, A I. Nikiforov, and O P. Pchelyakov, Thin Solid Films336, 332 (1998).
19. Nguyen Van Lien, B I. Shklovskii, and A L. Efros, Fiz. Tekh. Poluprovdn. 13, 2192 (1979) [Sov. Phys. Semicond.13, 1281 (1979)].
20. B. I. Shklovskii, Fiz. Tekh. Poluprovdn. 8, 416 (1974) [Sov. Phys. Semicond.8, 268 (1974)].
21. Since the confinement is much stronger in the growth direction, we model the lowest states as due to lateral confinement only.
22. V. Fock, Z. Phys.47, 446 (1928).
23. U. Merkt, J. Huser, and M. Wagner, Phys. Rev. B43, 7320 (1991).