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Advanced Functional Materials

Volumn 24, Issue 35, 2014, Pages 5522-5529

Electronic instabilities leading to electroformation of binary metal oxide-based resistive switches

(5) Sharma, Abhishek A a Noman, Mohammad a Abdelmoula, Mohamed a Skowronski, Marek a Bain, James A a

a CARNEGIE MELLON UNIVERSITY (United States)

Author keywords

electroforming temperature; electronic instability; negative differential resistance; resistive memory; RRAM

Indexed keywords

JOULE HEATING; NEGATIVE RESISTANCE; OXYGEN; OXYGEN VACANCIES; RANDOM ACCESS STORAGE; VACANCIES;

CONDITIONING PROCESS; ELECTRONIC INSTABILITIES; ELECTRONIC MECHANISMS; EXPERIMENTAL EVIDENCE; NEGATIVE DIFFERENTIAL RESISTANCES; RESISTIVE MEMORY; RESISTIVE SWITCHING DEVICES; RRAM;

ELECTRIC SWITCHES;

EID: 85027955257 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201400461 Document Type: Article

Times cited : (75)

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