-
1
-
-
36849125984
-
Low-frequency negative resistance in thin anodic oxide films
-
Hickmott, M. T. Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys. 33, 2669-2682 (1962).
-
(1962)
J. Appl. Phys.
, vol.33
, pp. 2669-2682
-
-
Hickmott, M.T.1
-
2
-
-
41149099157
-
Who wins the nonvolatile memory race?
-
Meijer, G. I. Who wins the nonvolatile memory race? Science 319, 1625-1626 (2008).
-
(2008)
Science
, vol.319
, pp. 1625-1626
-
-
Meijer, G.I.1
-
3
-
-
67650102619
-
Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges
-
Waser, R., Dittmann, R., Straikov, G. & Szot, K. Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21, 2632-2663 (2009).
-
(2009)
Adv. Mater.
, vol.21
, pp. 2632-2663
-
-
Waser, R.1
Dittmann, R.2
Straikov, G.3
Szot, K.4
-
4
-
-
35748974883
-
Nanoionic-based resistive switching memories
-
Waser, R. & Aono, M. Nanoionic-based resistive switching memories. Nature Mater. 6, 833-840 (2007).
-
(2007)
Nature Mater.
, vol.6
, pp. 833-840
-
-
Waser, R.1
Aono, M.2
-
5
-
-
43049126833
-
The missing memristor found
-
Strukov, D. B., Snider, G. S., Stewart, D. R. & Williams, R. S. The missing memristor found. Nature 453, 80-83 (2008).
-
(2008)
Nature
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
6
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
Yang, J. J. et al. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnol. 3, 429-433 (2008).
-
(2008)
Nature Nanotechnol.
, vol.3
, pp. 429-433
-
-
Yang, J.J.1
-
7
-
-
79851501719
-
Memory effects in complex materials and nanoscale systems
-
Pershin, Y. V. & Di Ventra, M. Memory effects in complex materials and nanoscale systems. Adv. Phys. 60, 145-227 (2011).
-
(2011)
Adv. Phys.
, vol.60
, pp. 145-227
-
-
Pershin, Y.V.1
Di Ventra, M.2
-
8
-
-
70349684961
-
Circuit elements with memory: Memristors, memcapacitors and meminductors
-
Di Ventra, M., Pershin, Y. V. & Chua, L. O. Circuit elements with memory: memristors, memcapacitors and meminductors. Proc. IEEE 97, 1717-1724 (2009).
-
(2009)
Proc. IEEE
, vol.97
, pp. 1717-1724
-
-
Di Ventra, M.1
Pershin, Y.V.2
Chua, L.O.3
-
9
-
-
70249115683
-
Memristive model of amoeba's learning
-
Pershin, Y. V., La Fontaine, S. & Di Ventra, M. Memristive model of amoeba's learning. Phys. Rev. E 80, 021926 (2009).
-
(2009)
Phys. Rev. E
, vol.80
, pp. 021926
-
-
Pershin, Y.V.1
La Fontaine, S.2
Di Ventra, M.3
-
10
-
-
0015127532
-
Memristor - The missing circuit element
-
Chua, L. O. Memristor - the missing circuit element. IEEE Trans. Circuit Theory 18, 507-519 (1971).
-
(1971)
IEEE Trans. Circuit Theory
, vol.18
, pp. 507-519
-
-
Chua, L.O.1
-
11
-
-
43549126477
-
Resistive switching in transition metal oxides
-
Sawa, A. Resistive switching in transition metal oxides. Mater. Today 11, 28-36 (2008).
-
(2008)
Mater. Today
, vol.11
, pp. 28-36
-
-
Sawa, A.1
-
12
-
-
33645641019
-
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
-
Szot, K., Speier, W., Bihlmayer, G. & Waser, R. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nature Mater. 5, 312-320 (2007).
-
(2007)
Nature Mater.
, vol.5
, pp. 312-320
-
-
Szot, K.1
Speier, W.2
Bihlmayer, G.3
Waser, R.4
-
13
-
-
76649133422
-
2 resistive switching memory
-
2 resistive switching memory. Nature Nanotechnol. 5, 148-153 (2010).
-
(2010)
Nature Nanotechnol.
, vol.5
, pp. 148-153
-
-
Kwon, D.H.1
-
14
-
-
78149290994
-
Scaling theory for unipolar resistance switching
-
Lee, J. S. et al. Scaling theory for unipolar resistance switching. Phys. Rev. Lett. 105, 205701 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 205701
-
-
Lee, J.S.1
-
15
-
-
84856763438
-
Dual defects of cation and anion on memristive nonvolatile memory of metaloxides
-
Oka, K. et al. Dual defects of cation and anion on memristive nonvolatile memory of metaloxides. J. Am. Chem. Soc. 134, 2535-2538 (2012).
-
(2012)
J. Am. Chem. Soc.
, vol.134
, pp. 2535-2538
-
-
Oka, K.1
-
16
-
-
77955732575
-
Direct identification of the conducting channels in a functioning memristive device
-
Strachan, J. P. et al. Direct identification of the conducting channels in a functioning memristive device. Adv. Mater. 22, 3573-3577 (2010).
-
(2010)
Adv. Mater.
, vol.22
, pp. 3573-3577
-
-
Strachan, J.P.1
-
19
-
-
0005761335
-
Theory of the oxidation of metals
-
Cabrera, N. & Mott, N. F. Theory of the oxidation of metals. Rep. Prog. Phys. 12, 163-184 (1949).
-
(1949)
Rep. Prog. Phys.
, vol.12
, pp. 163-184
-
-
Cabrera, N.1
Mott, N.F.2
-
20
-
-
58349100289
-
Exponential ionic drift: Fast switching and low volatility of thin-film memristors
-
Strukov, D. B. & Williams, R. S. Exponential ionic drift: fast switching and low volatility of thin-film memristors. Appl. Phys. A 94, 515-519 (2009).
-
(2009)
Appl. Phys. A
, vol.94
, pp. 515-519
-
-
Strukov, D.B.1
Williams, R.S.2
-
21
-
-
84948693022
-
Area effect and distance effect of transformer oil insulation
-
Satoh, T. & Tanaka, R. Area effect and distance effect of transformer oil insulation. Aichi Denki Gihou 28, 12-17 (2007).
-
(2007)
Aichi Denki Gihou
, vol.28
, pp. 12-17
-
-
Satoh, T.1
Tanaka, R.2
-
22
-
-
84911559033
-
Theory of dielectric breakdown in solid
-
O'Dwyer, J. J. Theory of dielectric breakdown in solid. J. Electrochem. Soc. 116, 239-242 (1969).
-
(1969)
J. Electrochem. Soc.
, vol.116
, pp. 239-242
-
-
O'Dwyer, J.J.1
-
23
-
-
25844479330
-
Dielectric breakdown mechanisms in gate oxides
-
Lombardo, S. et al. Dielectric breakdown mechanisms in gate oxides. J. Appl. Phys. 98, 121301 (2005).
-
(2005)
J. Appl. Phys.
, vol.98
, pp. 121301
-
-
Lombardo, S.1
-
24
-
-
77249099380
-
Thermally formed conducting filaments in a single-crystalline NiO thin film
-
Kawai, M., Ito, K., Ichikawa, N. & Shimakawa, Y. Thermally formed conducting filaments in a single-crystalline NiO thin film. Appl. Phys. Lett. 96, 072106 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 072106
-
-
Kawai, M.1
Ito, K.2
Ichikawa, N.3
Shimakawa, Y.4
-
25
-
-
84871772858
-
Memristive devices for computing
-
Joshua, Y. J., Strukov, D. B. & Stewart, D. R. Memristive devices for computing. Nat. Nanotech. 8, 13-24 (2013).
-
(2013)
Nat. Nanotech.
, vol.8
, pp. 13-24
-
-
Joshua, Y.J.1
Strukov, D.B.2
Stewart, D.R.3
-
26
-
-
42149132636
-
Effect of heterointerface on transport properties of in-situ formed MgO/titanate core-shell nanowires
-
Nagashima, K. et al. Effect of heterointerface on transport properties of in-situ formed MgO/titanate core-shell nanowires. J. Am. Chem. Soc. 130, 5378-5382 (2010).
-
(2010)
J. Am. Chem. Soc.
, vol.130
, pp. 5378-5382
-
-
Nagashima, K.1
-
27
-
-
70249109215
-
Non-volatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires
-
Oka, K., Yanagida, T., Nagashima, K., Tanaka, H. & Kawai, T. Non-volatile bipolar resistive memory switching in single crystalline NiO heterostructured nanowires. J. Am. Chem. Soc. 131, 3434-3435 (2009).
-
(2009)
J. Am. Chem. Soc.
, vol.131
, pp. 3434-3435
-
-
Oka, K.1
Yanagida, T.2
Nagashima, K.3
Tanaka, H.4
Kawai, T.5
-
29
-
-
77951064806
-
Resistive switching multistate non-volatile memory effects in a single cobalt oxide nanowire
-
Nagashima, K. et al. Resistive switching multistate non-volatile memory effects in a single cobalt oxide nanowire. Nano Lett. 10, 1359-1363 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 1359-1363
-
-
Nagashima, K.1
-
30
-
-
77249099863
-
Interfacial effect on metal/oxide nanowire junctions
-
Nagashima, K. et al. Interfacial effect on metal/oxide nanowire junctions. Appl. Phys. Lett. 96, 073110 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 073110
-
-
Nagashima, K.1
-
31
-
-
77952347658
-
Resistive switching memory effects of NiO nanowire/metal junctions
-
Oka, K. et al. Resistive switching memory effects of NiO nanowire/metal junctions. J. Am. Chem. Soc. 132, 6634-6635 (2010).
-
(2010)
J. Am. Chem. Soc.
, vol.132
, pp. 6634-6635
-
-
Oka, K.1
-
32
-
-
80051598530
-
Spatial nonuniformity in resistive switching memory effects of NiO
-
Oka, K. et al. Spatial nonuniformity in resistive switching memory effects of NiO. J. Am. Chem. Soc. 133, 12482-12485 (2011).
-
(2011)
J. Am. Chem. Soc.
, vol.133
, pp. 12482-12485
-
-
Oka, K.1
-
33
-
-
79955919620
-
Intrinsic mechanisms of memristive switching
-
Nagashima, K. et al. Intrinsic mechanisms of memristive switching. Nano Lett. 11, 2114-2118 (2011).
-
(2011)
Nano Lett.
, vol.11
, pp. 2114-2118
-
-
Nagashima, K.1
-
34
-
-
84869162736
-
Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides
-
Nagashima, K. et al. Prominent thermodynamical interaction with surroundings on nanoscale memristive switching of metal oxides. Nano Lett. 12, 5684-5690 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 5684-5690
-
-
Nagashima, K.1
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