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IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1057-1059

Formation and characterization of filamentary current paths in HFO 2-based resistive switching structures

(4) Palumbo, F a Miranda, E b Ghibaudo, G c Jousseaume, V d

a Facultad de Ciencias Naturales e Instituto M Lillo (Argentina)

b UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

c IMEP LAHC (France)

d CEA LETI (France)

Author keywords

Dielectric breakdown; resistive switching (RS)

Indexed keywords

CONFINEMENT EFFECTS; CURRENT MAGNITUDES; CURRENT PATHS; CURRENT-DRIVEN; ELECTRON TRANSPORT; ELECTRON WAVE FUNCTIONS; FORMATION DYNAMICS; FORMING PROCESS; MESOSCOPICS; OXIDE LAYER; PULSED VOLTAGES; RESISTIVE SWITCHING; VOLTAGE-CURRENT CHARACTERISTICS;

BIODEGRADATION; ELECTRIC BREAKDOWN; HAFNIUM OXIDES; LEAKAGE CURRENTS; SWITCHING;

SWITCHING SYSTEMS;

EID: 84862892004 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/LED.2012.2194689 Document Type: Article

Times cited : (18)

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