Time-dependent current-voltage curves during the forming process in unipolar resistance switching

Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

  Lee, S B ^a   Yoo, H K ^a   Chang, S H ^a   Gao, L G ^a   Kang, B S ^b   Lee, M J ^c   Kim, C J ^c   Noh, T W ^a  

^a Seoul National University   (South Korea)

^b Hanyang University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWNS; DIFFERENT MECHANISMS; FORMING PROCESS; RESISTANCE SWITCHING; SRTIO; SWEEP RATES; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED; TIME-DEPENDENT; TIME-DEPENDENT CURRENTS; WAVE FORMS;

OXYGEN; PLATINUM;

ELECTRIC BREAKDOWN;

EID: 79951498299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3552676     Document Type: Article

References (18)

1. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 0034-4885 33, 1129 (1970). 10.1088/0034-4885/33/3/306
2. S. Ramanathan, Thin Film Metal-Oxides: Fundamentals and Applications in Electronics and Energy (Springer, New York, 2010). 10.1007/978-1-4419-0664-9
3. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) 0935-9648 21, 2632 (2009). 10.1002/adma.200900375
4. S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. -W. Kim, C. U. Jung, S. Seo, M. -J. Lee, and T. W. Noh, Adv. Mater. (Weinheim, Ger.) 0935-9648 20, 1154 (2008). 10.1002/adma.200702024
5. S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D. -W. Kim, and T. W. Noh, Phys. Rev. Lett. 0031-9007 102, 026801 (2009). 10.1103/PhysRevLett.102.026801
6. D. Choi, D. Lee, H. Sim, M. Chang, and H. Hwang, Appl. Phys. Lett. 0003-6951 88, 082904 (2006). 10.1063/1.2178405
7. I. H. Inoue, S. Yasuda, H. Akinaga, and H. Takagi, Phys. Rev. B 0556-2805 77, 035105 (2008). 10.1103/PhysRevB.77.035105
8. K. Kinoshita, K. Tsunoda, Y. Sato, H. Noshiro, S. Yagaki, M. Aoki, and Y. Sugiyama, Appl. Phys. Lett. 0003-6951 93, 033506 (2008). 10.1063/1.2959065
9. M. -J. Lee, S. Han, S. H. Jeon, B. H. Park, B. S. Kang, S. -E. Ahn, K. H. Kim, C. B. Lee, C. J. Kim, I. -K. Yoo, D. H. Seo, X. -S. Li, J. -B. Park, J. -H. Lee, and Y. Park, Nano Lett. 1530-6984 9, 1476 (2009). 10.1021/nl803387q
10. D. -H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. -S. Li, G. -S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 1748-3387 5, 148 (2010). 10.1038/nnano.2009.456
11. S. B. Lee, A. Kim, J. S. Lee, S. H. Chang, H. K. Yoo, T. W. Noh, B. Kahng, M. -J. Lee, C. J. Kim, and B. S. Kang, Appl. Phys. Lett. 0003-6951 97, 093505 (2010). 10.1063/1.3486460
12. S. B. Lee, S. C. Chae, S. H. Chang, J. S. Lee, S. Seo, B. Kahng, and T. W. Noh, Appl. Phys. Lett. 0003-6951 93, 212105 (2008). 10.1063/1.3036532
13. G. -H. Buh, I. Hwang, and B. H. Park, Appl. Phys. Lett. 0003-6951 95, 142101 (2009). 10.1063/1.3242337
14. L. B. Loeb, Rev. Mod. Phys. 0034-6861 20, 151 (1948). 10.1103/RevModPhys.20.151
15. J. J. O'Dwyer, The Theory of Electrical Conduction and Breakdown in Solid Dielectrics (Clarendon, Oxford, 1973).
16. N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, and M. Aono, Jpn. J. Appl. Phys., Part 1 0021-4922 45, 3666 (2006). 10.1143/JJAP.45.3666 (Pubitemid 43794268)
17. K. Szot, W. Speier, R. Carius, U. Zastrow, and W. Beyer, Phys. Rev. Lett. 0031-9007 88, 075508 (2002). 10.1103/PhysRevLett.88.075508
18. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 0031-9007 98, 146403 (2007). 10.1103/PhysRevLett.98.146403 (Pubitemid 46557459)