Comparison of electric field dependent activation energy for electroformation in TaOx and TiOx based RRAMs

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2013, Pages 146-149

  Sharma, Abhishek A ^a   Noman, Mohammad ^a   Skowronski, Marek ^b   Bain, James A ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

activation energy of forming; electroforming; forming; resistive switching; RRAM

Indexed keywords

ELECTRIC FIELDS; RRAM; TITANIUM COMPOUNDS;

ACTIVATION ENERGY OF FORMING; CONTROL PARAMETERS; ELECTROFORMATIONS; NON-VOLATILE MEMORY; ONE-TIME PROGRAMMING; PROGRAMMING PROCESS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; TIO; TWO MODEL SYSTEMS;

ACTIVATION ENERGY;

EID: 84900472973     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IIRW.2013.6804180     Document Type: Conference Paper

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