MoS2 transistors operating at gigahertz frequencies

Nano Letters

Volumn 14, Issue 10, 2014, Pages 5905-5911

  Krasnozhon, Daria ^a   Lembke, Dominik ^a   Nyffeler, Clemens ^a   Leblebici, Yusuf ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

2D semiconductors; current gain; MoS2; power gain; radio frequency; voltage gain

Indexed keywords

CURRENT GAINS; MOS2; POWER GAINS; RADIO FREQUENCIES; VOLTAGE GAIN;

EID: 84907881643     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5028638     Document Type: Article

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