Top-gated chemical vapor deposition grown graphene transistors with current saturation

Nano Letters

Volumn 11, Issue 6, 2011, Pages 2555-2559

  Bai, Jingwei ^a   Liao, Lei ^a   Zhou, Hailong ^a   Cheng, Rui ^a   Liu, Lixin ^a   Huang, Yu ^a   Duan, Xiangfeng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

current saturation; dielectrics; Graphene; self alignment; transistors

Indexed keywords

CHANNEL LENGTH; CURRENT SATURATION; DIRAC POINT; DRAIN BIAS; DRAIN ELECTRODES; GRAPHENE TRANSISTORS; HIGH DIELECTRIC CONSTANT MATERIALS; LENGTH SCALING; RADIO FREQUENCY APPLICATIONS; RF PERFORMANCE; SATURATION CHARACTERISTIC; SELECTIVE DEPOSITION; SELF ALIGNMENT; SELF-ALIGNED; TOP-GATE;

DIELECTRIC MATERIALS; DRAIN CURRENT; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; HAFNIUM OXIDES; TRANSCONDUCTANCE; TRANSISTORS;

CHEMICAL VAPOR DEPOSITION;

GRAPHITE;

ARTICLE; CHEMISTRY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; VOLATILIZATION;

GRAPHITE; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC; VOLATILIZATION;

EID: 79958822497     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl201331x     Document Type: Article

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