메뉴 건너뛰기




Volumn 25, Issue 3, 2004, Pages 141-143

Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in HV MOSFETs

Author keywords

High voltage (HV) DMOSFETs; Self heating effect (SHE); Thermal capacitance; Thermal resistance

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC IMPEDANCE; ELECTRON MOBILITY; HEAT RESISTANCE; PULSE GENERATORS; SEMICONDUCTOR DEVICE MODELS; VOLTAGE MEASUREMENT;

EID: 1642349452     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.821669     Document Type: Article
Times cited : (61)

References (8)
  • 1
    • 0031271096 scopus 로고    scopus 로고
    • Characteristics of SOIFETs under pulsed conditions
    • Nov.
    • K. A. Jenkins, J. Y. -C. Sun, and J. Gautier, "Characteristics of SOIFETs under pulsed conditions," IEEE Trans. Electron Devices, vol. 44, pp. 1923-1930, Nov. 1997.
    • (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1923-1930
    • Jenkins, K.A.1    Sun, J.Y.-C.2    Gautier, J.3
  • 2
    • 0027617960 scopus 로고
    • Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements
    • W. Redman-White, M. S. L. Lee, B. M. Tenbroek, M. J. Uren, and R. J. T. Bunyan, "Direct extraction of MOSFET dynamic thermal characteristics from standard transistor structures using small signal measurements," Electron. Lett., vol. 29, no. 13, pp. 1180-1181, 1993.
    • (1993) Electron. Lett. , vol.29 , Issue.13 , pp. 1180-1181
    • Redman-White, W.1    Lee, M.S.L.2    Tenbroek, B.M.3    Uren, M.J.4    Bunyan, R.J.T.5
  • 4
    • 0035310019 scopus 로고    scopus 로고
    • SOI thermal impedance extraction methodology and its significance for circuit simulation
    • Apr.
    • W. Jin, W. Liu, S. K. H. Fung, P. C. H. Chan, and C. Hu, "SOI thermal impedance extraction methodology and its significance for circuit simulation," IEEE Trans. Electron Devices, vol. 48, pp. 730-736, Apr. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 730-736
    • Jin, W.1    Liu, W.2    Fung, S.K.H.3    Chan, P.C.H.4    Hu, C.5
  • 5
    • 0028531417 scopus 로고
    • SPICE model and parameters for fully-depleted SOI MOSFETs including self-heating
    • Oct.
    • L. T. Su, D. Antoniadis, N. D. Arora, S. Doyle, and D. B. Krakauer, "SPICE model and parameters for fully-depleted SOI MOSFETs including self-heating," IEEE Electron Device Lett., vol. 15, pp. 374-376, Oct. 1994.
    • (1994) IEEE Electron Device Lett. , vol.15 , pp. 374-376
    • Su, L.T.1    Antoniadis, D.2    Arora, N.D.3    Doyle, S.4    Krakauer, D.B.5
  • 6
    • 0036604604 scopus 로고    scopus 로고
    • Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models
    • D. J. Walkey, T. J. Smy, T. Macelwee, and M. Maliepaard, "Compact representation of temperature and power dependence of thermal resistance in Si, Inp and GaAs substrate devices using linear models," Solid State Electron., vol. 46, no. 6, pp. 819-826, 2002.
    • (2002) Solid State Electron. , vol.46 , Issue.6 , pp. 819-826
    • Walkey, D.J.1    Smy, T.J.2    Macelwee, T.3    Maliepaard, M.4
  • 7
    • 1642413587 scopus 로고    scopus 로고
    • [Online]
    • BSIMSOI. [Online]. Available: http://www-device.eecs.berkeley.edu
    • BSIMSOI
  • 8
    • 0023998758 scopus 로고
    • New method for the extraction of MOSFET parameters
    • G. Ghibaudo, "New method for the extraction of MOSFET parameters," Electron. Lett., vol. 24, no. 9, pp. 543-545, 1988.
    • (1988) Electron. Lett. , vol.24 , Issue.9 , pp. 543-545
    • Ghibaudo, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.