Role of joule heating on current saturation and transient behavior of graphene transistors

IEEE Electron Device Letters

Volumn 34, Issue 2, 2013, Pages 166-168

  Islam, Sharnali ^a   Li, Zuanyi ^a   Dorgan, Vincent E ^a   Bae, Myung Ho ^a,b   Pop, Eric ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Current saturation; graphene field effect transistor (FET); scaling; self heating; thermal transient

Indexed keywords

CAPPING LAYER; CHANNEL DEVICE; CURRENT SATURATION; GRAPHENE TRANSISTORS; HEAT SINKING; HEATING EFFECT; HIGH-FIELD; ON CURRENTS; OUTPUT CONDUCTANCE; SCALING; SELF-HEATING; SOI TRANSISTORS; SUBMICRON; THERMAL TIME CONSTANTS; THERMAL TRANSIENTS; TRANSIENT BEHAVIOR; ULTRA-THIN-BODY;

FIELD EFFECT TRANSISTORS; GRAPHENE; TRANSISTORS;

POWER QUALITY;

EID: 84873059303     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2230393     Document Type: Article

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