Static and dynamic performance of complementary inverters based on nanosheet α-MoTe2 p-channel and MoS2 n-channel transistors

ACS Nano

Volumn 10, Issue 1, 2016, Pages 1118-1125

  Pezeshki, Atiye ^a   Hosseini Shokouh, Seyed Hossein ^a   Jeon, Pyo Jin ^a   Shackery, Iman ^a   Kim, Jin Sung ^a   Oh, Il Kwon ^a   Jun, Seong Chan ^a   Kim, Hyungjun ^a   Im, Seongil ^a  

^a Yonsei University   (South Korea)

Author keywords

Complementary inverter; MoS2 nanosheet; MoTe2 nanosheet; Switching speed; Voltage gain

Indexed keywords

ELECTRIC INVERTERS; ELECTRONIC PROPERTIES; GAIN MEASUREMENT; MOLYBDENUM COMPOUNDS; NANOSHEETS; TRANSISTORS; TRANSITION METALS;

COMPLEMENTARY INVERTERS; FIELD EFFECT TRANSISTOR (FETS); OPTICAL AND ELECTRONIC PROPERTIES; STATIC AND DYNAMIC PERFORMANCE; STATIC POWER CONSUMPTION; SWITCHING SPEED; TRANSITION METAL DICHALCOGENIDES; VOLTAGE GAIN;

FIELD EFFECT TRANSISTORS;

EID: 84989325696     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b06419     Document Type: Article

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