High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits

Nano Letters

Volumn 15, Issue 8, 2015, Pages 4928-4934

  Yu, Lili ^a   Zubair, Ahmad ^a   Santos, Elton J G ^b   Zhang, Xu ^a   Lin, Yuxuan ^a   Zhang, Yuhao ^a   Palacios, Tomás ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

^b Stanford University   (United States)

Author keywords

air stable doping; CMOS electronics; complementary logic; integrated circuits; low power electronics; Transition metal dichalcogenides

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; LOW POWER ELECTRONICS; METALLIC COMPOUNDS; MOS DEVICES; OXIDE SEMICONDUCTORS; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; TIMING CIRCUITS; TRANSITION METALS;

AIR STABLE; COMPLEMENTARY LOGIC; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; HIGH NOISE MARGINS; INDUSTRY-COMPATIBLE; STRUCTURAL AND ELECTRICAL PROPERTIES; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL MATERIALS;

THIN FILM CIRCUITS;

METAL; OXIDE; SELENIUM DERIVATIVE; TUNGSTEN DERIVATIVE;

CHEMISTRY; EQUIPMENT DESIGN; SEMICONDUCTOR;

EQUIPMENT DESIGN; METALS; OXIDES; SELENIUM COMPOUNDS; SEMICONDUCTORS; TUNGSTEN COMPOUNDS;

EID: 84939229951     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00668     Document Type: Article

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