Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe2

ACS Nano

Volumn 8, Issue 4, 2014, Pages 3895-3903

  Yamamoto, Mahito ^a   Wang, Sheng Tsung ^b   Ni, Meiyan ^a,c   Lin, Yen Fu ^a,d   Li, Song Lin ^a   Aikawa, Shinya ^a   Jian, Wen Bin ^b   Ueno, Keiji ^e   Wakabayashi, Katsunori ^a   Tsukagoshi, Kazuhito ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^d NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^e SAITAMA UNIVERSITY   (Japan)

Author keywords

density functional theory; molybdenum ditelluride; Raman spectroscopy; transition metal dichalcogenides

Indexed keywords

DENSITY FUNCTIONAL THEORY; PHONONS; RAMAN SCATTERING;

MOLYBDENUM DITELLURIDE; TRANSITION METAL DICHALCOGENIDES;

RAMAN SPECTROSCOPY;

EID: 84899451693     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5007607     Document Type: Article

References (71)

1. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
2. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L. -J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275
3. Butler, S. Z.; Hollen, S. M.; Cao, L.; Cui, Y.; Gupta, J. A.; Gutiérrez, H. R.; Heinz, T. F.; Hong, S. S.; Huang, J.; Ismach, A. F. et al. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene ACS Nano 2013, 7, 2898-2926
4. Xu, M.; Liang, T.; Shi, M.; Chen, H. Graphene-like Two-Dimensional Materials Chem. Rev. 2013, 113, 3766-3798
5. Song, X.; Hu, J.; Zeng, H. Two-Dimensional Semiconductors: Recent Progress and Future Perspectives J. Mater. Chem. C 2013, 1, 2952-2969
6. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
7. 2 Nano Lett. 2010, 10, 1271-1275
8. 2 Nano Lett. 2012, 12, 5576-5580
9. 2 Monolayers Nano Lett. 2013, 13, 3447-3454
10. 2 ACS Nano 2013, 7, 791-797
11. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
12. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
13. 2 Layers Appl. Phys. Lett. 2012, 101, 223104
14. 2 Transistors and Their Applications in Logic Circuits. Adv. Mater., accepted.
15. 2 Phototransistors ACS Nano 2012, 6, 74-80
16. 2 Nat. Nanotechnol. 2013, 8, 497-501
17. 2 Nano Lett. 2013, 13, 1416-1421
18. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in a Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 10.1038/nnano.2014.25
19. 2 p-n Junctions Nat. Nanotechnol. 2014, 10.1038/nnano.2014.26
20. Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-Energy Conversion and Light Emission in an Atomic Monolayer p-n Diode Nat. Nanotechnol. 2014, 10.1038/nnano.2014.14
21. 2 ACS Nano 2011, 12, 9703-9709
22. 2 Thin-Film Transistors with Ion Gel Dielectrics Nano Lett. 2012, 12, 4013-4017
23. 2 Thin Film Transistors to Any Arbitrary Substrate ACS Nano 2013, 7, 8809-8815
24. 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostrucures ACS Nano 2013, 7, 7931-7936
25. Yu, W. J.; Li, Z.; Zhou, H.; Chen, Y.; Wang, Y.; Huang, Y.; Duan, X. Vertically Stacked Multi-Heterostructures of Layered Materials for Logic Transistors and Complementary Inverters Nat. Mater. 2013, 12, 246-252
26. 2 (M = Mo, W; X= S, Se) Monolayers J. Appl. Phys. 2013, 113, 104304
27. 2 from First Principles Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 115317
28. 2 from First Principles Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 235312
29. 2 Field-Effect Transistors ACS Nano 2011, 5, 7707-7712
30. Li, S. -L.; Wakabayashi, K.; Xu, Y.; Nakaharai, S.; Komatsu, K.; Li, W. -W.; Lin, Y. -F.; Aparecido-Ferreira, A.; Tsukagoshi, K. Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors Nano Lett. 2013, 13, 3546-3552
31. 2 Sheet and Nanoribbons Appl. Phys. Lett. 2013, 103, 133113
32. 2 from First Principles Appl. Phys. Lett. 2013, 103, 253103
33. 2 Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 235407
34. 2 Transistor Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 161403(R)
35. 2) of Varying Thicknesses Appl. Phys. Lett. 2012, 100, 013106
36. 2 J. Phys. Chem. C 2013, 117, 9042-9047
37. Yan, R.; Simpson, J. R.; Bertolazzi, S.; Brivio, J.; Watson, M.; Wu, X.; Kis, A.; Luo, T.; Walker, A. R. H.; Xing, H. G. Thermal Conductivity of Monolayer Molybdenum Disulfide Obtained from Temperature-Dependent Raman Spectroscopy ACS Nano 2014, 8, 986-993
38. 2 Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 081307(R)
39. 2 under Uniaxial Strain Small 2013, 9, 2857-2861
40. 2 ACS Nano 2010, 4, 2695-2700
41. 2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385-1390
42. 2 Using Raman Spectroscopy Sci. Rep. 2013, 3, 1755
43. 2 Nanoscale 2013, 5, 9677-9683
44. 2 (M = Mo, Nb, W, Ta; X = S, Se, Te) Monolayers Physica B 2011, 406, 2254-2260
45. Ataca, C.; Şahin, H.; Ciraci, S. Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-like Structure J. Phys. Chem. C 2012, 116, 8983-8999
46. 2 Monolayers Phys. Chem. Chem. Phys. 2011, 13, 15546-15553
47. 2 J. Solid State Chem. 1970, 2, 299-302
48. 2 J. Phys. C: Solid State Phys. 1987, 20, 6159-6174
49. 2 Physica B 1980, 99, 337-342
50. 2 Phys. Rev. B: Condens. Matter Mater. Phys. 1982, 26, 6554-6558
51. Agnihotri, O. P.; Sehgal, H. K.; Garg, A. K. Laser Excited Raman Spectra of Gr. VI Semiconducting Compounds Solid State Commun. 1973, 12, 135-138
52. Lieth, R. M. A. Preparation and Crystal Growth of Materials with Layered Structures; Springer: Berlin, 1977; Vol. 1.
53. Li, S. -L.; Miyazaki, H.; Song, H.; Kuramochi, H.; Nakaharai, S.; Tsukagoshi, K. Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates ACS Nano 2012, 6, 7381-7388
54. Li, H.; Wu, J.; Huang, X.; Lu, G.; Yang, J.; Lu, X.; Xiong, Q.; Zhang, H. Rapid and Reliable Thickness Identification of Two-Dimensional Nanosheets Using Optical Microscopy ACS Nano 2013, 7, 10344-10353
55. Castellanos-Gomez, A.; Agraït, N.; Rubio-Bollinger, G. Optical Identification of Atomically Thin Dichalcogenide Crystals Appl. Phys. Lett. 2010, 96, 213116
56. 2 Crystals Nano Res. 2013, 6, 191-199
57. 2 Nano Lett. 2013, 13, 1007-1015
58. 2 Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 88, 195313
59. 2 Flakes Appl. Phys. Lett. 2012, 101, 101906
60. 2 Films Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 86, 241301(R)
61. 2 Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 115413
62. 3: Applications to Tribological Systems Tribol. Lett. 2011, 42, 301-310
63. 2 under Resonant Condition J. Phys. Soc. Jpn. 1984, 53, 811-818
64. 2 Thin Films Attributed to Surface Effects Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 88, 075320
65. 2 Opt. Express 2013, 21, 4908-4916
66. Kresse, G.; Furthmüller, J. Efficiency of Ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set Comput. Mater. Sci. 1996, 6, 15-50
67. Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using a Plane-Wave Basis Set Phys. Rev. B: Condens. Matter Mater. Phys. 1996, 54, 11169-11186
68. 3 Films: Applications in Nanometrology of Topological Insulators Appl. Phys. Lett. 2010, 96, 153103
69. Teweldebrhan, D.; Goyal, V.; Balandin, A. A. Exfoliation and Characterization of Bismuth Telluride Atomic Quintuples and Quasi-Two- Dimensional Crystals Nano Lett. 2010, 10, 1209-1218
70. 3 Materials J. Appl. Phys. 2012, 111, 054305
71. 2 Sci. Rep. 2013, 3, 2593