High gain, low noise, fully complementary logic inverter based on bi-layer WSe2 field effect transistors

Applied Physics Letters

Volumn 105, Issue 8, 2014, Pages

  Das, Saptarshi ^a   Dubey, Madan ^b   Roelofs, Andreas ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER DIODES;

COMPLEMENTARY LOGIC; ELECTRON CONDUCTION; ELECTROSTATIC DOPING; FIELD EFFECT TRANSISTOR (FETS); HIGH DRIVE CURRENT; SCHOTTKY BARRIERS; TRANSISTOR GEOMETRIES; WORK FUNCTION ENGINEERINGS;

FIELD EFFECT TRANSISTORS;

EID: 84907337471     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4894426     Document Type: Article

References (20)

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