-
1
-
-
77955231284
-
Graphene Transistors
-
Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 487-496
-
-
Schwierz, F.1
-
2
-
-
43049170468
-
Ultrahigh Electron Mobility in Suspended Graphene
-
Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh Electron Mobility in Suspended Graphene Solid State Commun. 2008, 146, 351-355
-
(2008)
Solid State Commun.
, vol.146
, pp. 351-355
-
-
Bolotin, K.I.1
Sikes, K.J.2
Jiang, Z.3
Klima, M.4
Fudenberg, G.5
Hone, J.6
Kim, P.7
Stormer, H.L.8
-
3
-
-
7444220645
-
Electric Field Effect in Atomically Thin Carbon Films
-
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Ann. N.Y. Acad. Sci. 2004, 306, 666-669
-
(2004)
Ann. N.Y. Acad. Sci.
, vol.306
, pp. 666-669
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Zhang, Y.5
Dubonos, S.V.6
Grigorieva, I.V.7
Firsov, A.A.8
-
4
-
-
19944428003
-
Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-Based Nanoelectronics
-
et al.
-
Berger, C.; Song, Z.; Li, T.; Li, X.; Ogbazghi, A. Y.; Feng, R.; Dai, Z.; Marchenkov, A. N.; Conrad, E. H.; First, P. N. et al. Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-Based Nanoelectronics J. Phys. Chem. B 2004, 108, 19912-19916
-
(2004)
J. Phys. Chem. B
, vol.108
, pp. 19912-19916
-
-
Berger, C.1
Song, Z.2
Li, T.3
Li, X.4
Ogbazghi, A.Y.5
Feng, R.6
Dai, Z.7
Marchenkov, A.N.8
Conrad, E.H.9
First, P.N.10
-
5
-
-
79551634368
-
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
-
Coleman, J. N.; Lotya, M.; O'Neill, A.; Bergin, S. D.; King, P. J.; Khan, U.; Young, K.; Gaucher, A.; De, S.; Smith, R. J. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials Science 2011, 331, 568-571
-
(2011)
Science
, vol.331
, pp. 568-571
-
-
Coleman, J.N.1
Lotya, M.2
O'Neill, A.3
Bergin, S.D.4
King, P.J.5
Khan, U.6
Young, K.7
Gaucher, A.8
De, S.9
Smith, R.J.10
-
7
-
-
83655172584
-
2
-
2 Nano Lett. 2011, 11, 5111-5116
-
(2011)
Nano Lett.
, vol.11
, pp. 5111-5116
-
-
Eda, G.1
Yamaguchi, H.2
Voiry, D.3
Fujita, T.4
Chen, M.5
Chhowalla, M.6
-
8
-
-
79961188826
-
2
-
et al.
-
2 Phys. Rev. B 2011, 84, 045409
-
(2011)
Phys. Rev. B
, vol.84
, pp. 045409
-
-
Han, S.W.1
Kwon, H.2
Kim, S.K.3
Ryu, S.4
Yun, W.S.5
Kim, D.H.6
Hwang, J.H.7
Kang, J.S.8
Baik, J.9
Shin, H.J.10
-
9
-
-
84863834607
-
2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
-
2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap Nano Lett. 2012, 12, 3695-3700
-
(2012)
Nano Lett.
, vol.12
, pp. 3695-3700
-
-
Lee, H.S.1
Min, S.-W.2
Chang, Y.-G.3
Park, M.K.4
Nam, T.5
Kim, H.6
Kim, J.H.7
Ryu, S.8
Im, S.9
-
11
-
-
77951069162
-
2
-
2 Nano Lett. 2010, 10, 1271-1275
-
(2010)
Nano Lett.
, vol.10
, pp. 1271-1275
-
-
Splendiani, A.1
Sun, L.2
Zhang, Y.3
Li, T.4
Kim, J.5
Chim, C.-Y.6
Galli, G.7
Wang, F.8
-
12
-
-
84868713254
-
2 Phototransistors with Spectral Response from Ultraviolet to Infrared
-
2 Phototransistors with Spectral Response from Ultraviolet to Infrared Adv. Mater. 2012, 24, 5832-5836
-
(2012)
Adv. Mater.
, vol.24
, pp. 5832-5836
-
-
Choi, W.1
Cho, M.Y.2
Konar, A.3
Lee, J.H.4
Cha, G.B.5
Hong, S.C.6
Kim, S.7
Kim, J.8
Jena, D.9
Joo, J.10
-
16
-
-
84866027034
-
2 Transistors
-
2 Transistors Nano Lett. 2012, 12, 4674-4680
-
(2012)
Nano Lett.
, vol.12
, pp. 4674-4680
-
-
Wang, H.1
Yu, L.2
Lee, Y.-H.3
Shi, Y.4
Hsu, A.5
Chin, M.L.6
Li, L.-J.7
Dubey, M.8
Kong, J.9
Palacios, T.10
-
17
-
-
84879691489
-
2 Monolayer
-
2 Monolayer Adv. Mater. 2013, 25, 3456-3461
-
(2013)
Adv. Mater.
, vol.25
, pp. 3456-3461
-
-
Zhang, W.1
Huang, J.K.2
Chen, C.H.3
Chang, Y.H.4
Cheng, Y.J.5
Li, L.J.6
-
18
-
-
84864599209
-
A Molybdenum Disulfide/Carbon Nanotube Heterogeneous Complementary Inverter
-
Huang, J.; Somu, S.; Busnaina, A. A Molybdenum Disulfide/Carbon Nanotube Heterogeneous Complementary Inverter Nanotechnology 2012, 23, 335203
-
(2012)
Nanotechnology
, vol.23
, pp. 335203
-
-
Huang, J.1
Somu, S.2
Busnaina, A.3
-
19
-
-
84887279609
-
2 Heterojunction p-n Diode
-
2 Heterojunction p-n Diode Proc. Natl. Acad. Sci. U.S.A. 2013, 110, 18076-18080
-
(2013)
Proc. Natl. Acad. Sci. U.S.A.
, vol.110
, pp. 18076-18080
-
-
Jariwala, D.1
Sangwan, V.K.2
Wu, C.-C.3
Prabhumirashi, P.L.4
Geier, M.L.5
Marks, T.J.6
Lauhon, L.J.7
Hersam, M.C.8
-
20
-
-
84871758711
-
2 Dielectric Property Evidenced by Field-Effect Transistor Performance
-
2 Dielectric Property Evidenced by Field-Effect Transistor Performance Nanoscale 2013, 5, 548-551
-
(2013)
Nanoscale
, vol.5
, pp. 548-551
-
-
Min, S.-W.1
Lee, H.S.2
Choi, H.J.3
Park, M.K.4
Nam, T.5
Kim, H.6
Ryu, S.7
Im, S.8
-
22
-
-
84893465925
-
High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
-
Dankert, A.; Langouche, L.; Kamalakar, M. V.; Dash, S. P. High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts ACS Nano 2014, 8, 476-482
-
(2014)
ACS Nano
, vol.8
, pp. 476-482
-
-
Dankert, A.1
Langouche, L.2
Kamalakar, M.V.3
Dash, S.P.4
-
24
-
-
78649883862
-
Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors
-
Saudari, S. R.; Lin, Y. J.; Lai, Y.; Kagan, C. R. Device Configurations for Ambipolar Transport in Flexible, Pentacene Transistors Adv. Mater. 2010, 22, 5063-5068
-
(2010)
Adv. Mater.
, vol.22
, pp. 5063-5068
-
-
Saudari, S.R.1
Lin, Y.J.2
Lai, Y.3
Kagan, C.R.4
-
25
-
-
0038166414
-
Optimum Channel Thickness in Pentacene-Based Thin-Film Transistors
-
Lee, J.; Kim, K.; Kim, J. H.; Im, S.; Jung, D.-Y. Optimum Channel Thickness in Pentacene-Based Thin-Film Transistors Appl. Phys. Lett. 2003, 82, 4169-4171
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 4169-4171
-
-
Lee, J.1
Kim, K.2
Kim, J.H.3
Im, S.4
Jung, D.-Y.5
-
26
-
-
84894635747
-
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
-
Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides ACS Nano 2014, 1102-1120
-
(2014)
ACS Nano
, pp. 1102-1120
-
-
Jariwala, D.1
Sangwan, V.K.2
Lauhon, L.J.3
Marks, T.J.4
Hersam, M.C.5
-
27
-
-
33747304485
-
Optical Properties of ZnO Nanostructures
-
Djurišić, A. B.; Leung, Y. H. Optical Properties of ZnO Nanostructures Small 2006, 2, 944-961
-
(2006)
Small
, vol.2
, pp. 944-961
-
-
Djurišić, A.B.1
Leung, Y.H.2
-
28
-
-
38749153186
-
Nature of Sub-Band Gap Luminescent Eigenmodes in a ZnO Nanowire
-
Rühle, S.; Van Vugt, L.; Li, H.-Y.; Keizer, N.; Kuipers, L.; Vanmaekelbergh, D. Nature of Sub-Band Gap Luminescent Eigenmodes in a ZnO Nanowire Nano Lett. 2008, 8, 119-123
-
(2008)
Nano Lett.
, vol.8
, pp. 119-123
-
-
Rühle, S.1
Van Vugt, L.2
Li, H.-Y.3
Keizer, N.4
Kuipers, L.5
Vanmaekelbergh, D.6
-
29
-
-
80054049922
-
Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation
-
Ryu, B.; Lee, Y. T.; Lee, K. H.; Ha, R.; Park, J. H.; Choi, H.-J.; Im, S. Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation Nano Lett. 2011, 11, 4246-4250
-
(2011)
Nano Lett.
, vol.11
, pp. 4246-4250
-
-
Ryu, B.1
Lee, Y.T.2
Lee, K.H.3
Ha, R.4
Park, J.H.5
Choi, H.-J.6
Im, S.7
-
31
-
-
84879691489
-
2 Monolayer
-
2 Monolayer Adv. Mater. 2013, 25, 3456-3461
-
(2013)
Adv. Mater.
, vol.25
, pp. 3456-3461
-
-
Zhang, W.1
Huang, J.-K.2
Chen, C.-H.3
Chang, Y.-H.4
Cheng, Y.-J.5
Li, L.-J.6
-
32
-
-
33645676985
-
2 Layered Semiconductors
-
2 Layered Semiconductors J. Appl. Phys. 2006, 99, 063706
-
(2006)
J. Appl. Phys.
, vol.99
, pp. 063706
-
-
Lee, Y.C.1
Shen, J.L.2
Chen, K.W.3
Lee, W.Z.4
Hu, S.Y.5
Tiong, K.K.6
Huang, Y.S.7
-
33
-
-
84888347307
-
2 Hybrid Structures for Multifunctional Photoresponsive Memory Devices
-
2 Hybrid Structures for Multifunctional Photoresponsive Memory Devices Nat. Nanotechnol. 2013, 8, 826-830
-
(2013)
Nat. Nanotechnol.
, vol.8
, pp. 826-830
-
-
Roy, K.1
Padmanabhan, M.2
Goswami, S.3
Sai, T.P.4
Ramalingam, G.5
Raghavan, S.6
Ghosh, A.7
-
34
-
-
84885159942
-
2 Films
-
2 Films J. Mater. Chem. C 2013, 1, 6899-6904
-
(2013)
J. Mater. Chem. C
, vol.1
, pp. 6899-6904
-
-
Cunningham, G.1
Khan, U.2
Backes, C.3
Hanlon, D.4
McCloskey, D.5
Donegan, J.F.6
Coleman, J.N.7
-
36
-
-
84862818967
-
Gated Three-Terminal Device Architecture to Eliminate Persistent Photoconductivity in Oxide Semiconductor Photosensor Arrays
-
Jeon, S.; Ahn, S.-E.; Song, I.; Kim, C. J.; Chung, U.-I.; Lee, E.; Yoo, I.; Nathan, A.; Lee, S.; Robertson, J. Gated Three-Terminal Device Architecture to Eliminate Persistent Photoconductivity in Oxide Semiconductor Photosensor Arrays Nat. Mater. 2012, 11, 301-305
-
(2012)
Nat. Mater.
, vol.11
, pp. 301-305
-
-
Jeon, S.1
Ahn, S.-E.2
Song, I.3
Kim, C.J.4
Chung, U.-I.5
Lee, E.6
Yoo, I.7
Nathan, A.8
Lee, S.9
Robertson, J.10
-
37
-
-
33749233582
-
Anion Vacancies as a Source of Persistent Photoconductivity in II-VI and Chalcopyrite Semiconductors
-
Lany, S.; Zunger, A. Anion Vacancies as a Source of Persistent Photoconductivity in II-VI and Chalcopyrite Semiconductors Phys. Rev. B 2005, 72, 035215
-
(2005)
Phys. Rev. B
, vol.72
, pp. 035215
-
-
Lany, S.1
Zunger, A.2
-
38
-
-
84886649638
-
A ZnO Nanowire-Based Photo-Inverter with Pulse-Induced Fast Recovery
-
Ali Raza, S. R.; Lee, Y. T.; Hosseini Shokouh, S. H.; Ha, R.; Choi, H.-J.; Im, S. A ZnO Nanowire-Based Photo-Inverter with Pulse-Induced Fast Recovery Nanoscale 2013, 5, 10829-10834
-
(2013)
Nanoscale
, vol.5
, pp. 10829-10834
-
-
Ali Raza, S.R.1
Lee, Y.T.2
Hosseini Shokouh, S.H.3
Ha, R.4
Choi, H.-J.5
Im, S.6
-
39
-
-
79960175322
-
ZnO Schottky Barriers and Ohmic Contacts
-
Brillson, L. J.; Lu, Y. ZnO Schottky Barriers and Ohmic Contacts J. Appl. Phys. 2011, 109, 121301-121301-33
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 1213011-1213043
-
-
Brillson, L.J.1
Lu, Y.2
-
40
-
-
84877773742
-
Long Single ZnO Nanowire for Logic and Memory Circuits: NOT, NAND, NOR Gate, and SRAM
-
Lee, Y. T.; Ali Raza, S. R.; Jeon, P. J.; Ha, R.; Choi, H.-J.; Im, S. Long Single ZnO Nanowire for Logic and Memory Circuits: NOT, NAND, NOR Gate, and SRAM Nanoscale 2013, 5, 4181-4185
-
(2013)
Nanoscale
, vol.5
, pp. 4181-4185
-
-
Lee, Y.T.1
Ali Raza, S.R.2
Jeon, P.J.3
Ha, R.4
Choi, H.-J.5
Im, S.6
-
41
-
-
84887860184
-
2 Flakes on a Patterned Gate for Nanosheet Transistors
-
2 Flakes on a Patterned Gate for Nanosheet Transistors J. Mater. Chem. C 2013, 1, 7803-7807
-
(2013)
J. Mater. Chem. C
, vol.1
, pp. 7803-7807
-
-
Choi, K.1
Lee, Y.T.2
Min, S.-W.3
Lee, H.S.4
Nam, T.5
Kim, H.6
Im, S.7
|