A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors

Nanoscale Research Letters

Volumn 10, Issue 1, 2015, Pages

  Cho, Ah Jin ^a   Park, Kee Chan ^b   Kwon, Jang Yeon ^a  

^a Yonsei University   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

2 Dimensional material; CMOS inverter; Transition metal dichalcogenide (TMD)

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER CIRCUITS; ENERGY GAP; GRAPHENE; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MOS DEVICES; OXIDE SEMICONDUCTORS; SELENIUM COMPOUNDS; TRANSITION METALS;

BASIC LOGIC ELEMENTS; CMOS INVERTERS; COMPLEMENTARY INVERTERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DRIVING CURRENT; ELECTRICAL PERFORMANCE; INTRINSIC NATURE; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84924911204     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/s11671-015-0827-1     Document Type: Article

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