Role of metal contacts in high-performance phototransistors based on WSe2 monolayers

ACS Nano

Volumn 8, Issue 8, 2014, Pages 8653-8661

  Zhang, Wenjing ^a,c   Chiu, Ming Hui ^d   Chen, Chang Hsiao ^b   Chen, Wei ^c   Li, Lain Jong ^b,d   Wee, Andrew Thye Shen ^c  

^a SHENZHEN UNIVERSITY   (China)

^b ACADEMIA SINICA   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

2D material; contact effect; photodetector; Schottky barrier; tungsten diselenide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; GALLIUM COMPOUNDS; PHOTODETECTORS; PHOTONS; PHOTOTRANSISTORS; SCHOTTKY BARRIER DIODES; SELENIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSITION METALS; TUNGSTEN COMPOUNDS;

CHEMICAL VAPOR DEPOSITIONS (CVD); CONTACT EFFECT; FAST RESPONSE TIME; ORDERS OF MAGNITUDE; SCHOTTKY BARRIERS; SPECIFIC DETECTIVITY; TRANSITION METAL DICHALCOGENIDES (TMD); TUNGSTEN DISELENIDE;

MONOLAYERS;

EID: 84906657558     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503521c     Document Type: Article

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