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Nanoscale

Volumn 5, Issue 10, 2013, Pages 4181-4185

Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM

(6) Lee, Young Tack a Ali Raza, Syed Raza a Jeon, Pyo Jin a Ha, Ryong a Choi, Heon Jin a Im, Seongil a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; NANOWIRES; STATIC RANDOM ACCESS STORAGE; ZINC OXIDE;

DEPLETION MODES; FIELD EFFECT TRANSISTOR (FETS); HIGH VOLTAGE GAIN; INDIUM TIN OXIDE; MEMORY CIRCUITS; OPERATIONAL VOLTAGE; STATIC RANDOM ACCESS MEMORY; WORK-FUNCTION DIFFERENCE;

LOGIC CIRCUITS;

EID: 84877773742 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr01015e Document Type: Article

Times cited : (23)

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