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Volumn 26, Issue 43, 2014, Pages 7399-7404

Transparent, high-performance thin-film transistors with an InGaZnO/Aligned-SnO2-nanowire composite and their application in photodetectors

(12) Liu, Xingqiang a Wang, Jingli a Liao, Chongnan a Xiao, Xiangheng a Guo, Shishang a Jiang, Changzhong a Fan, Zhiyong c Wang, Ti a Chen, Xiaoshuang b Lu, Wei b Hu, Weida b Liao, Lei a

a WUHAN UNIVERSITY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHROMIUM COMPOUNDS; COMPOSITE FILMS; FILM PREPARATION; GALLIUM COMPOUNDS; GOLD COMPOUNDS; HAFNIUM OXIDES; ITO GLASS; MOLAR RATIO; NITRATES; ORGANOMETALLICS; SEMICONDUCTING INDIUM COMPOUNDS; SILICA; SILICON WAFERS; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; ZINC COMPOUNDS;

ANHYDROUS ETHANOL; CHEMICAL VAPOR DEPOSITION METHODS; COMPOSITE THIN FILMS; GALLIUM NITRATES; GLASS SUBSTRATES; OXYGEN PLASMAS; TRANSPARENT ELECTRONICS; TRANSPARENT TFTS;

THIN FILM TRANSISTORS;

EID: 84961295140 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201401732 Document Type: Article

Times cited : (110)

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