SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 548, Issue , 2013, Pages 572-575

Self-aligned top-gate InGaZnO thin film transistors using SiO 2/Al2O3 stack gate dielectric

(5) Chen, Rongsheng a Zhou, Wei a Zhang, Meng a Wong, Man a Kwok, Hoi Sing a

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

Aluminum oxide; Amorphous indium gallium zinc oxide; Self aligned structure; Thin film transistors

Indexed keywords

ALUMINUM OXIDES; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; INDIUM-GALLIUM-ZINC OXIDES; ON/OFF CURRENT RATIO; SELF-ALIGNED; STACK GATE DIELECTRICS; THIN-FILM TRANSISTOR (TFTS);

ALUMINUM; GALLIUM; GATE DIELECTRICS; INDIUM; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84887465164 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2013.09.020 Document Type: Article

Times cited : (16)

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