High performance low temperature metal-induced unilaterally crystallized polycrystalline silicon thin film transistors for system-on-panel applications

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 404-409

  Meng, Zhiguo ^a   Wang, Mingxiang ^a   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC BREAKDOWN OF SOLIDS; GRAIN BOUNDARIES; LEAKAGE CURRENTS; NICKEL; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

METAL INDUCED UNILATERAL CRYSTALLIZATION (MIUC); SYSTEM-ON-PANEL DEVICES;

THIN FILM TRANSISTORS;

EID: 0033882049     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822287     Document Type: Article

References (11)

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