Photo-modulated thin film transistor based on dynamic charge transfer within quantum-dots-InGaZnO interface

Applied Physics Letters

Volumn 104, Issue 11, 2014, Pages

  Liu, Xiang ^a,b   Yang, Xiaoxia ^b   Liu, Mingju ^b   Tao, Zhi ^a   Dai, Qing ^b,c   Wei, Lei ^a   Li, Chi ^a   Zhang, Xiaobing ^a   Wang, Baoping ^a   Nathan, Arokia ^a,c  

^a SOUTHEAST UNIVERSITY   (China)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EXTERNAL QUANTUM EFFICIENCY; OFF-STATE CURRENT; OPTICAL SENSITIVITY; OXIDE THIN FILMS; PERSISTENT PHOTOCONDUCTIVITY; TEMPORAL DEVELOPMENT; ULTRAFAST QUENCHING; VISIBLE WAVEBAND;

CHARGE TRANSFER; PHOTOELECTRIC DEVICES; PHOTOTRANSISTORS; THIN FILMS; ZINC;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84897834658     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4868978     Document Type: Article

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